CVD growth of ZrC layers at different temperatures.

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dc.contributor.authorAlawad, BAB
dc.contributor.authorBiira, S
dc.contributor.authorBissett, H
dc.contributor.authorNel, J
dc.contributor.authorHlatshwayo, TT
dc.contributor.authorCrouse, PL
dc.contributor.authorMalherbe, JB
dc.date.accessioned2026-07-17T07:00:29Z
dc.date.available2026-07-17T07:00:29Z
dc.date.issued2016
dc.descriptionJournal Article
dc.description.abstractZirconium carbide (ZrC) layers were grown on a graphite substrate by chemical vapour deposition(CVD) at 1250°C, 1300°C and 1350°C. Zirconium tetrachloride (ZrCl4), methane (CH4), hydrogen (H2) and argon(Ar) were used as precursors. The deposited ZrC layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XDR showed ZrC characteristic peaks with free carbon. Free carbon incorporated in the ZrC layer increased with deposition temperature. The average of grain size also increased with deposition temperature. The latter findings were confirmed by SEM results. Keywords: chemical vapour deposition (CVD), ZrC, XRD, SEM
dc.description.sponsorshipNuclear Energy Corporation South Africa (Necsa); The University of Pretoria ; The Sudan University of Science ; Busitema University
dc.identifier.citationBAB Alawad, S Biira, H Bissett, JT Nel, TT Hlatshwayo, PL Crouse, and JB Malherbe, “CVD Growth of ZrC Layers at Different Temperatures.” Physics and Materials Chemistry, vol. 4, no. 1 (2016): 6-9. doi: 10.12691/pmc-4-1-2.
dc.identifier.urihttps://bdears.busitema.ac.ug/handle/123456789/7951
dc.language.isoen
dc.publisherSciEP
dc.relation.ispartofseriesPhysics and Materials Chemistry; 2016, Vol. 4, No. 1, 6-9
dc.titleCVD growth of ZrC layers at different temperatures.
dc.typeArticle
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